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WM02DN70M3

WM02DN70M3 WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D28F2B664640D6&compId=WM02DN70M3.pdf?ci_sign=e7f5f8ac380963b9175008c918531f28436c4c8f Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 17mΩ
Version: ESD
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
391+0.18 EUR
648+0.11 EUR
722+0.099 EUR
878+0.082 EUR
928+0.077 EUR
Mindestbestellmenge: 139
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Technische Details WM02DN70M3 WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.7W, Case: SOT23-6, Mounting: SMD, Kind of package: reel; tape, Semiconductor structure: common drain, On-state resistance: 17mΩ, Version: ESD, Gate charge: 9.6nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: 28A, Drain-source voltage: 20V, Drain current: 7A.