Produkte > WAYON > WM02DP06D
WM02DP06D

WM02DP06D WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D29F44EAC960D6&compId=WM02DP06D.pdf?ci_sign=390baa125d6870c50c56e17616e4424c96339323 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 200mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3002 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1389+0.051 EUR
1539+0.046 EUR
1806+0.04 EUR
1909+0.037 EUR
Mindestbestellmenge: 193
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Technische Details WM02DP06D WAYON

Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 200mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.64A, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.