Produkte > WAYON > WM02DP06T
WM02DP06T

WM02DP06T WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D19D4A7EC120D6&compId=WM02DP06T.pdf?ci_sign=b6ab4b95283f5606de55992c30cb1e757f676f8b Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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1250+0.057 EUR
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Technische Details WM02DP06T WAYON

Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.64A, Power dissipation: 0.15W, Case: SOT563, Gate-source voltage: ±12V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.