WM02DP06T WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 550+ | 0.13 EUR |
| 920+ | 0.078 EUR |
| 1023+ | 0.07 EUR |
| 1161+ | 0.062 EUR |
| 3000+ | 0.056 EUR |
| 6000+ | 0.055 EUR |
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Technische Details WM02DP06T WAYON
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.64A, Power dissipation: 0.15W, Case: SOT563, Gate-source voltage: ±12V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02DP06T nach Preis ab 0.056 EUR bis 0.37 EUR
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WM02DP06T | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -660mA Pulsed drain current: -2.64A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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