WM02N08FB WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details WM02N08FB WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.75A, Pulsed drain current: 3A, Power dissipation: 0.15W, Case: DFN1006-3, Gate-source voltage: ±10V, On-state resistance: 0.32Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.