Produkte > WAYON > WM02N08G
WM02N08G

WM02N08G WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1CE46884720D6&compId=WM02N08G.pdf?ci_sign=e2e30d1d61cc4fff9ad1f93be539ffb13fb988f0 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2975 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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Technische Details WM02N08G WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 200mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.75A, Pulsed drain current: 3A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 0.45Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.