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WM02P06G

WM02P06G WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2AA2C408D00D6&compId=WM02P06G.pdf?ci_sign=21067e27acd61d963ef802c088c422bb848ea60c Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.64A; 200mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
1725+0.041 EUR
Mindestbestellmenge: 173
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Technische Details WM02P06G WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.64A; 200mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -2.64A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±10V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.