
WM02P06L WAYON

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -1.2A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -1.2A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
562+ | 0.13 EUR |
1303+ | 0.055 EUR |
1859+ | 0.038 EUR |
2067+ | 0.035 EUR |
2200+ | 0.033 EUR |
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Technische Details WM02P06L WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -1.2A; 150mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -660mA, Pulsed drain current: -1.2A, Power dissipation: 0.15W, Case: SOT523, Gate-source voltage: ±12V, On-state resistance: 0.52Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.