WM02P14G WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 544+ | 0.13 EUR |
| 1263+ | 0.057 EUR |
| 1806+ | 0.04 EUR |
| 2000+ | 0.036 EUR |
| 2370+ | 0.03 EUR |
| 2500+ | 0.029 EUR |
| 3000+ | 0.028 EUR |
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Technische Details WM02P14G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.4A, Pulsed drain current: -5.6A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 70mΩ, Mounting: SMD, Gate charge: 4.9nC, Kind of package: reel; tape, Kind of channel: enhancement.