WM02P18F WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WM02P18F WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -1.8A, Pulsed drain current: -7.2A, Power dissipation: 0.7W, Case: DFN1006-3, Gate-source voltage: ±10V, On-state resistance: 0.15Ω, Mounting: SMD, Gate charge: 2.72nC, Kind of package: reel; tape, Kind of channel: enhancement.