
WM02P20G WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
481+ | 0.15 EUR |
1117+ | 0.064 EUR |
1598+ | 0.045 EUR |
2084+ | 0.034 EUR |
2203+ | 0.032 EUR |
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Technische Details WM02P20G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2A, Pulsed drain current: -8A, Power dissipation: 0.25W, Case: SOT323, Gate-source voltage: ±12V, On-state resistance: 65mΩ, Mounting: SMD, Gate charge: 6.23nC, Kind of package: reel; tape, Kind of channel: enhancement.