WM02P23M WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 463+ | 0.15 EUR |
| 1017+ | 0.07 EUR |
| 2428+ | 0.029 EUR |
| 2689+ | 0.027 EUR |
| 2997+ | 0.024 EUR |
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Technische Details WM02P23M WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2.3A, Pulsed drain current: -9.2A, Power dissipation: 0.7W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 0.115Ω, Mounting: SMD, Gate charge: 3.2nC, Kind of package: reel; tape, Kind of channel: enhancement.