Suchergebnisse für "wm02p40m3" : 1
Art der Ansicht :
Mindestbestellmenge: 167
Im Einkaufswagen
Stück im Wert von UAH
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WM02P40M3 | WAYON |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1.8W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1975 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02P40M3 |
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Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.8W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.8W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
496+ | 0.14 EUR |
1191+ | 0.06 EUR |
1327+ | 0.054 EUR |
1583+ | 0.045 EUR |
1673+ | 0.043 EUR |