Produkte > WAYON > WM02P40M3
WM02P40M3

WM02P40M3 WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2BDB60F5640D6&compId=WM02P40M3.pdf?ci_sign=45483d0cfa3091ed0f46ddd5e29071a790cf976b Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.8W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1975 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
496+0.14 EUR
1191+0.06 EUR
1327+0.054 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 167
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Technische Details WM02P40M3 WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -4A, Pulsed drain current: -16A, Power dissipation: 1.8W, Case: SOT23-6, Gate-source voltage: ±10V, On-state resistance: 48mΩ, Mounting: SMD, Gate charge: 11.7nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.