WM02P56M3 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 521+ | 0.14 EUR |
| 869+ | 0.082 EUR |
| 962+ | 0.074 EUR |
| 1153+ | 0.062 EUR |
| 1217+ | 0.059 EUR |
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Technische Details WM02P56M3 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -5.6A, Pulsed drain current: -22.4A, Power dissipation: 2W, Case: SOT23-6, Gate-source voltage: ±12V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 14.2nC, Kind of package: reel; tape, Kind of channel: enhancement.