Suchergebnisse für "wm02p56m3" : 1
Art der Ansicht :
Mindestbestellmenge: 179
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
WM02P56M3 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.6A Pulsed drain current: -22.4A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
|
WM02P56M3 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
521+ | 0.14 EUR |
869+ | 0.082 EUR |
962+ | 0.074 EUR |
1153+ | 0.062 EUR |
1217+ | 0.059 EUR |