Produkte > WAYON > WM03DN06D
WM03DN06D

WM03DN06D WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A1760E9D40D6&compId=WM03DN06D.pdf?ci_sign=c04aafe2cc87b2fb7f3eff086fee18f6c76375fd Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
527+0.14 EUR
1250+0.057 EUR
1393+0.051 EUR
1651+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 179
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Technische Details WM03DN06D WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 1.8A, Power dissipation: 0.3W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 450pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.