WM03DN06D WAYON
Hersteller: WAYONCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 521+ | 0.14 EUR |
| 1250+ | 0.057 EUR |
| 1393+ | 0.051 EUR |
| 1583+ | 0.045 EUR |
| 3000+ | 0.041 EUR |
| 6000+ | 0.039 EUR |
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Technische Details WM03DN06D WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 1.8A, Power dissipation: 0.3W, Case: SOT363, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 450pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM03DN06D nach Preis ab 0.045 EUR bis 0.4 EUR
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WM03DN06D | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 1.8A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 450pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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