Produkte > WAYON > WM03N01G
WM03N01G

WM03N01G WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1EBD1DF30E0D6&compId=WM03N01G.pdf?ci_sign=d9e094b8f313904af995ee5de07fa9a39f2578ae Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; Idm: 0.4A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Pulsed drain current: 0.4A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 540pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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Technische Details WM03N01G WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; Idm: 0.4A; 350mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.1A, Pulsed drain current: 0.4A, Power dissipation: 0.35W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2.5Ω, Mounting: SMD, Gate charge: 540pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.