Produkte > WAYON > WM03N06M
WM03N06M

WM03N06M WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1FE7FDCC360D6&compId=WM03N06M.pdf?ci_sign=51f525bc143862541a97a607fac085d0d60d7eba Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
365+0.2 EUR
1097+0.065 EUR
2215+0.033 EUR
Mindestbestellmenge: 162
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Technische Details WM03N06M WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 2.4A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 0.75nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.