WM03N06M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Version: ESD
Drain current: 0.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.5Ω
Mounting: SMD
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Gate charge: 0.75nC
Polarisation: unipolar
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Technische Details WM03N06M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23, Version: ESD, Drain current: 0.6A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±12V, Kind of package: reel; tape, Case: SOT23, On-state resistance: 0.5Ω, Mounting: SMD, Pulsed drain current: 2.4A, Power dissipation: 0.35W, Gate charge: 0.75nC, Polarisation: unipolar.

