WM03N06M WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1792 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 368+ | 0.19 EUR |
| 1097+ | 0.065 EUR |
| 1792+ | 0.04 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.019 EUR |
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Technische Details WM03N06M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.6A, Pulsed drain current: 2.4A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 0.75nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM03N06M nach Preis ab 0.04 EUR bis 0.46 EUR
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WM03N06M | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 2.4A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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