WM03N09F WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.93A
Pulsed drain current: 3.7A
Power dissipation: 715mW
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Technische Details WM03N09F WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.93A, Pulsed drain current: 3.7A, Power dissipation: 715mW, Case: DFN1006-3, Gate-source voltage: ±12V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 0.65nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.