WM05DP01D WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; Idm: -0.52A; 200mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Pulsed drain current: -0.52A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; Idm: -0.52A; 200mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Pulsed drain current: -0.52A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 562+ | 0.13 EUR |
| 1330+ | 0.054 EUR |
| 1480+ | 0.048 EUR |
| 1812+ | 0.039 EUR |
| 1916+ | 0.037 EUR |
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Technische Details WM05DP01D WAYON
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; Idm: -0.52A; 200mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -130mA, Pulsed drain current: -0.52A, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±20V, On-state resistance: 3.5Ω, Mounting: SMD, Gate charge: 2.2nC, Kind of package: reel; tape, Kind of channel: enhancement.