
WM05N03G WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
582+ | 0.12 EUR |
1345+ | 0.053 EUR |
1938+ | 0.037 EUR |
2146+ | 0.033 EUR |
2539+ | 0.028 EUR |
2689+ | 0.027 EUR |
3000+ | 0.026 EUR |
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Technische Details WM05N03G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.3A, Pulsed drain current: 1.2A, Power dissipation: 0.35W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2.1Ω, Mounting: SMD, Gate charge: 1.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.