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WM05N03G

WM05N03G WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D20B9B35CE80D6&compId=WM05N03G.pdf?ci_sign=809a7aa5e86a4e1b7b21f25b9a957e54c6e3b658 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1938+0.037 EUR
2146+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 193
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Technische Details WM05N03G WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.3A, Pulsed drain current: 1.2A, Power dissipation: 0.35W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2.1Ω, Mounting: SMD, Gate charge: 1.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.