WM05P01G WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 424+ | 0.17 EUR |
| 933+ | 0.077 EUR |
| 2223+ | 0.032 EUR |
| 2464+ | 0.029 EUR |
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Technische Details WM05P01G WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -0.13A, Pulsed drain current: -0.52A, Power dissipation: 0.225W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 3.5Ω, Mounting: SMD, Gate charge: 0.65nC, Kind of package: reel; tape, Kind of channel: enhancement.