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WM05P02F WAYON

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Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD

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Technische Details WM05P02F WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -250mA, Pulsed drain current: -1A, Power dissipation: 0.35W, Case: DFN1006-3, Gate-source voltage: ±20V, On-state resistance: 3.2Ω, Mounting: SMD, Gate charge: 2.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.