Produkte > WAYON > WM05P02G
WM05P02G

WM05P02G WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2CDA3923C80D6&compId=WM05P02G.pdf?ci_sign=99acd017703945ac55cb33865118252dcb4ef1d6 Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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Technische Details WM05P02G WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -0.2A, Pulsed drain current: -0.8A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 3Ω, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.