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WM06DN03DE

WM06DN03DE WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A64907B780D6&compId=WM06DN03DE.pdf?ci_sign=9a3bf3071e10da3aebf0f1f87ea1fac96132d0c5 Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
435+0.16 EUR
1017+0.07 EUR
1450+0.049 EUR
1887+0.038 EUR
2000+0.036 EUR
3000+0.035 EUR
Mindestbestellmenge: 152
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Technische Details WM06DN03DE WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.2W, Case: SOT363, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 1.06nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.