Produkte > WAYON > WM06N03GE
WM06N03GE

WM06N03GE WAYON

pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D221714DD720D6&compId=WM06N03GE.pdf?ci_sign=37cda92f350bd099923b8a6745fb9fcdb641336f Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2476+0.029 EUR
2942+0.024 EUR
Mindestbestellmenge: 157
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Technische Details WM06N03GE WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 610pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.