Produkte > WAYON > WM06N03ME
WM06N03ME

WM06N03ME WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D235E1C4E9C0D6&compId=WM06N03ME.pdf?ci_sign=9825ba01b912f6687f2823634ce0cd91655b3f50 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
447+0.16 EUR
1345+0.053 EUR
2399+0.03 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WM06N03ME WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 610pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.