
WM06N03ME WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
447+ | 0.16 EUR |
1345+ | 0.053 EUR |
2399+ | 0.03 EUR |
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Technische Details WM06N03ME WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 610pC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.