WMB014N06LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 164 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 70+ | 1.03 EUR |
| 79+ | 0.92 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.82 EUR |
| 3000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB014N06LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 278A, Pulsed drain current: 1112A, Power dissipation: 183.8W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 1.4mΩ, Mounting: SMD, Gate charge: 143.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMB014N06LG4 nach Preis ab 0.85 EUR bis 1.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMB014N06LG4 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 143.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
|