WMB023N03LG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 122+ | 0.59 EUR |
| 135+ | 0.53 EUR |
| 163+ | 0.44 EUR |
| 172+ | 0.42 EUR |
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Technische Details WMB023N03LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 67A, Pulsed drain current: 251A, Power dissipation: 49W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 3.7mΩ, Mounting: SMD, Gate charge: 21.5nC, Kind of package: reel; tape, Kind of channel: enhancement.