WMB02DN10T1 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 6.94W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 206+ | 0.35 EUR |
| 247+ | 0.29 EUR |
| 321+ | 0.22 EUR |
| 341+ | 0.21 EUR |
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Technische Details WMB02DN10T1 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; Idm: 14A; 6.94W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 6.94W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 0.29Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhancement.