WMB03DN06T1 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 203+ | 0.35 EUR |
| 243+ | 0.29 EUR |
| 317+ | 0.23 EUR |
| 336+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB03DN06T1 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 6.94W, Case: PDFN5060-8, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 6A, On-state resistance: 0.11Ω, Gate charge: 5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 24A.