WMB042DN03LG2 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45/50A
Power dissipation: 26/27.1W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 5.5/4.2mΩ
Mounting: SMD
Gate charge: 8.8/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 81+ | 0.88 EUR |
| 86+ | 0.84 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.69 EUR |
| 3000+ | 0.64 EUR |
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Technische Details WMB042DN03LG2 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 45/50A, Power dissipation: 26/27.1W, Case: PDFN5060D-8, Gate-source voltage: ±20V, On-state resistance: 5.5/4.2mΩ, Mounting: SMD, Gate charge: 8.8/15nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: asymmetric, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMB042DN03LG2 nach Preis ab 0.84 EUR bis 1.1 EUR
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WMB042DN03LG2 | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 45/50A; 26/27.1W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 45/50A Power dissipation: 26/27.1W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 5.5/4.2mΩ Mounting: SMD Gate charge: 8.8/15nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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