WMB049N12HG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| 48+ | 1.50 EUR |
| 51+ | 1.42 EUR |
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Technische Details WMB049N12HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 66A, Pulsed drain current: 420A, Power dissipation: 113.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 5mΩ, Mounting: SMD, Gate charge: 67nC, Kind of channel: enhancement.