WMB072N12HG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 104W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 54+ | 1.34 EUR |
| 55+ | 1.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB072N12HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 104W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 104W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 7.5mΩ, Mounting: SMD, Gate charge: 43nC, Kind of package: reel; tape, Kind of channel: enhancement.