
WMB072N12LG2-S WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 90A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 90A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 118W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Case: PDFN5060-8
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
65+ | 1.12 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
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Technische Details WMB072N12LG2-S WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 90A; Idm: 360A; 118W, Mounting: SMD, Drain-source voltage: 120V, Drain current: 90A, On-state resistance: 7mΩ, Type of transistor: N-MOSFET, Power dissipation: 118W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 52.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 360A, Case: PDFN5060-8.