WMB090DN04LG2 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 174+ | 0.41 EUR |
| 192+ | 0.37 EUR |
| 246+ | 0.29 EUR |
| 260+ | 0.28 EUR |
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Technische Details WMB090DN04LG2 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 28.5A, Pulsed drain current: 180A, Power dissipation: 31.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 5.6nC, Kind of package: reel; tape, Kind of channel: enhancement.