WMB090DNV6LG4 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 27.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 27.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 99+ | 0.73 EUR |
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Technische Details WMB090DNV6LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 65V; 40A; Idm: 160A; 27.8W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 40A, Pulsed drain current: 160A, Power dissipation: 27.8W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 10.5mΩ, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhancement.