WMB100P03TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Power dissipation: 73.5W
Mounting: SMD
Case: PDFN5060-8
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -400A
Drain current: -100A
Drain-source voltage: -30V
Gate charge: 134nC
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Kind of channel: enhancement
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Technische Details WMB100P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W, Power dissipation: 73.5W, Mounting: SMD, Case: PDFN5060-8, Kind of package: reel; tape, Type of transistor: P-MOSFET, Polarisation: unipolar, Pulsed drain current: -400A, Drain current: -100A, Drain-source voltage: -30V, Gate charge: 134nC, On-state resistance: 3.9mΩ, Gate-source voltage: ±20V, Kind of channel: enhancement.

