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WMB100P03TS WAYON



Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Mounting: SMD
Pulsed drain current: -400A
Power dissipation: 73.5W
Gate charge: 134nC
Polarisation: unipolar
Drain current: -100A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 3.9mΩ
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Technische Details WMB100P03TS WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W, Mounting: SMD, Pulsed drain current: -400A, Power dissipation: 73.5W, Gate charge: 134nC, Polarisation: unipolar, Drain current: -100A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 3.9mΩ.