WMB119N10LG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Case: PDFN5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 75W
Drain current: 50A
Gate-source voltage: ±20V
Pulsed drain current: 148A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Case: PDFN5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 75W
Drain current: 50A
Gate-source voltage: ±20V
Pulsed drain current: 148A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 100+ | 0.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB119N10LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W, Case: PDFN5060-8, Mounting: SMD, Polarisation: unipolar, Gate charge: 21nC, On-state resistance: 13mΩ, Kind of channel: enhancement, Power dissipation: 75W, Drain current: 50A, Gate-source voltage: ±20V, Pulsed drain current: 148A, Drain-source voltage: 100V, Kind of package: reel; tape, Type of transistor: N-MOSFET.