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WMB128N10T2 WAYON

Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Pulsed drain current: 512A
Power dissipation: 127.5W
Gate charge: 72nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 4.2mΩ
Mounting: SMD

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Technische Details WMB128N10T2 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W, Pulsed drain current: 512A, Power dissipation: 127.5W, Gate charge: 72nC, Polarisation: unipolar, Drain current: 128A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 4.2mΩ, Mounting: SMD.