Suchergebnisse für "wmb128n10t2" : 1
Art der Ansicht :
Mindestbestellmenge: 53
Im Einkaufswagen
Stück im Wert von UAH
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WMB128N10T2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 128A Pulsed drain current: 512A Power dissipation: 127.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMB128N10T2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 128A
Pulsed drain current: 512A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 128A
Pulsed drain current: 512A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 57+ | 1.27 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |