WMB128N10T2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Case: PDFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 127.5W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: reel; tape
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 54+ | 1.33 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
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Technische Details WMB128N10T2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W, Case: PDFN5060-8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 72nC, On-state resistance: 4.2mΩ, Gate-source voltage: ±20V, Drain-source voltage: 100V, Power dissipation: 127.5W, Drain current: 128A, Pulsed drain current: 512A, Kind of package: reel; tape.