WMB175DN10LG4 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 77+ | 0.93 EUR |
| 98+ | 0.73 EUR |
| 100+ | 0.72 EUR |
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Technische Details WMB175DN10LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 39A, Pulsed drain current: 156A, Power dissipation: 59.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 19.5mΩ, Mounting: SMD, Gate charge: 22.5nC, Kind of package: reel; tape, Kind of channel: enhancement.