WMB175N10HG4 WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1766 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 100+ | 0.72 EUR |
| 166+ | 0.43 EUR |
| 240+ | 0.3 EUR |
| 254+ | 0.28 EUR |
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Technische Details WMB175N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 29A, Pulsed drain current: 184A, Power dissipation: 71.4W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 30ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMB175N10HG4 nach Preis ab 0.28 EUR bis 1.03 EUR
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WMB175N10HG4 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 184A Power dissipation: 71.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 30ns |
auf Bestellung 1766 Stücke: Lieferzeit 14-21 Tag (e) |
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