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WMB175N10HG4

WMB175N10HG4 WAYON

WMB175N10HG4.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Pulsed drain current: 184A
Power dissipation: 71.4W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 17.5mΩ
Reverse recovery time: 30ns
Mounting: SMD
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108+0.8 EUR
179+0.48 EUR
199+0.43 EUR
250+0.39 EUR
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Technische Details WMB175N10HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns, Pulsed drain current: 184A, Power dissipation: 71.4W, Gate charge: 17nC, Polarisation: unipolar, Drain current: 29A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 17.5mΩ, Reverse recovery time: 30ns, Mounting: SMD.