Produkte > WAYON > WMB175N10HG4
WMB175N10HG4

WMB175N10HG4 WAYON

pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB6885536934760D4&compId=WMB175N10HG4.pdf?ci_sign=2c1d364da4857ebfe0812888a9e8e3f962a0bfe4 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
109+0.66 EUR
181+0.4 EUR
240+0.3 EUR
253+0.28 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WMB175N10HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 29A, Pulsed drain current: 184A, Power dissipation: 71.4W, Case: PDFN56, Gate-source voltage: ±20V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 30ns.