WMB31430DN WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Case: PDFN5060D-8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Gate charge: 31.1/90nC
On-state resistance: 4.5/1.3mΩ
Gate-source voltage: ±20V
Power dissipation: 24/37.8W
Drain-source voltage: 30V
Drain current: 56/130A
Polarisation: unipolar
Semiconductor structure: asymmetric
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 57+ | 1.27 EUR |
| 63+ | 1.14 EUR |
| 100+ | 1.06 EUR |
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Technische Details WMB31430DN WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W, Case: PDFN5060D-8, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Mounting: SMD, Gate charge: 31.1/90nC, On-state resistance: 4.5/1.3mΩ, Gate-source voltage: ±20V, Power dissipation: 24/37.8W, Drain-source voltage: 30V, Drain current: 56/130A, Polarisation: unipolar, Semiconductor structure: asymmetric, Kind of channel: enhancement.