WMB31430DN WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 54+ | 1.34 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| 6000+ | 0.97 EUR |
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Technische Details WMB31430DN WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 56/130A, Power dissipation: 24/37.8W, Case: PDFN5060D-8, Gate-source voltage: ±20V, On-state resistance: 4.5/1.3mΩ, Mounting: SMD, Gate charge: 31.1/90nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: asymmetric, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMB31430DN nach Preis ab 1 EUR bis 1.43 EUR
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WMB31430DN | Hersteller : WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/130A Power dissipation: 24/37.8W Case: PDFN5060D-8 Gate-source voltage: ±20V On-state resistance: 4.5/1.3mΩ Mounting: SMD Gate charge: 31.1/90nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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