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WMB31430DN WAYON

Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Kind of package: reel; tape
Semiconductor structure: asymmetric
Case: PDFN5060D-8
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Power dissipation: 24/37.8W
Gate charge: 31.1/90nC
Polarisation: unipolar
Drain current: 56/130A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V

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Technische Details WMB31430DN WAYON

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W, Kind of package: reel; tape, Semiconductor structure: asymmetric, Case: PDFN5060D-8, On-state resistance: 4.5/1.3mΩ, Mounting: SMD, Power dissipation: 24/37.8W, Gate charge: 31.1/90nC, Polarisation: unipolar, Drain current: 56/130A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±20V.