WMB31430DN WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
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Technische Details WMB31430DN WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 56/130A, Power dissipation: 24/37.8W, Case: PDFN5060D-8, Gate-source voltage: ±20V, On-state resistance: 4.5/1.3mΩ, Mounting: SMD, Gate charge: 31.1/90nC, Kind of package: reel; tape, Kind of channel: enhancement, Semiconductor structure: asymmetric.