WMB510N15HG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.10 EUR |
| 90+ | 0.80 EUR |
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Technische Details WMB510N15HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 28A, Pulsed drain current: 112A, Power dissipation: 80.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 51mΩ, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhancement.