WMB60P02TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 227+ | 0.32 EUR |
| 252+ | 0.28 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
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Technische Details WMB60P02TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -60A, Pulsed drain current: -240A, Power dissipation: 41.9W, Case: PDFN5060-8, Gate-source voltage: ±10V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 43nC, Kind of package: reel; tape, Kind of channel: enhancement.