WMB70P02TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 156+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 208+ | 0.34 EUR |
| 221+ | 0.32 EUR |
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Technische Details WMB70P02TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -70A, Pulsed drain current: -280A, Power dissipation: 43.1W, Case: PDFN5060-8, Gate-source voltage: ±12V, On-state resistance: 5.2mΩ, Mounting: SMD, Gate charge: 55nC, Kind of package: reel; tape, Kind of channel: enhancement.