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WMB93N25JN WAYON

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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 190ns

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Technische Details WMB93N25JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 42A, Pulsed drain current: 280A, Power dissipation: 180W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 190ns.