Produkte > WAYON > WMH7N65D1B

WMH7N65D1B WAYON


Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details WMH7N65D1B WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 7A, Pulsed drain current: 28A, Power dissipation: 150W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 1.35Ω, Mounting: THT, Gate charge: 24.3nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote WMH7N65D1B

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
WMH7N65D1B Hersteller : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar