Produkte > WAYON > WMJ020N10HGS
WMJ020N10HGS

WMJ020N10HGS WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
auf Bestellung 284 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WMJ020N10HGS WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 250nC, On-state resistance: 2mΩ, Gate-source voltage: ±20V, Power dissipation: 347.2W, Drain-source voltage: 100V, Drain current: 288A, Pulsed drain current: 1152A, Case: TO247-3, Kind of package: tube.