WMJ020N10HGS WAYON
Hersteller: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 23+ | 3.25 EUR |
| 26+ | 2.85 EUR |
| 30+ | 2.57 EUR |
| 90+ | 2.49 EUR |
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Technische Details WMJ020N10HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 250nC, On-state resistance: 2mΩ, Gate-source voltage: ±20V, Power dissipation: 347.2W, Drain-source voltage: 100V, Drain current: 288A, Pulsed drain current: 1152A, Case: TO247-3, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ020N10HGS nach Preis ab 2.49 EUR bis 3.42 EUR
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WMJ020N10HGS | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 250nC On-state resistance: 2mΩ Gate-source voltage: ±20V Power dissipation: 347.2W Drain-source voltage: 100V Drain current: 288A Pulsed drain current: 1152A Case: TO247-3 Kind of package: tube |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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