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WMJ020N10HGS

WMJ020N10HGS WAYON

WMJ020N10HGS.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Pulsed drain current: 1152A
Power dissipation: 347.2W
Gate charge: 250nC
Polarisation: unipolar
Drain current: 288A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 2mΩ
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Technische Details WMJ020N10HGS WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W, Mounting: THT, Pulsed drain current: 1152A, Power dissipation: 347.2W, Gate charge: 250nC, Polarisation: unipolar, Drain current: 288A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: tube, Case: TO247-3, On-state resistance: 2mΩ.