WMJ023N08HGS WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 2.4mΩ
Power dissipation: 320.5W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Case: TO247-3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 2.4mΩ
Power dissipation: 320.5W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Case: TO247-3
Kind of channel: enhancement
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Technische Details WMJ023N08HGS WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W, Type of transistor: N-MOSFET, Kind of package: tube, Mounting: THT, Polarisation: unipolar, Gate charge: 0.14µC, On-state resistance: 2.4mΩ, Power dissipation: 320.5W, Gate-source voltage: ±20V, Drain-source voltage: 80V, Drain current: 280A, Pulsed drain current: 1120A, Case: TO247-3, Kind of channel: enhancement.