Suchergebnisse für "wmj023n08hgs" : 1
Art der Ansicht :
Im Einkaufswagen
Stück im Wert von UAH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||
|---|---|---|---|---|---|---|---|
|
|
WMJ023N08HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 320.5W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMJ023N08HGS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |