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WMJ10N80D1

WMJ10N80D1 WAYON


Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 234 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
46+1.57 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 37
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Technische Details WMJ10N80D1 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10A, Power dissipation: 215W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 910mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 33nC, Pulsed drain current: 40A.