WMJ10N80D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 50+ | 1.46 EUR |
| 66+ | 1.09 EUR |
| 73+ | 0.99 EUR |
| 120+ | 0.92 EUR |
| 300+ | 0.87 EUR |
| 900+ | 0.8 EUR |
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Technische Details WMJ10N80D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10A, Power dissipation: 215W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 910mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 40A, Gate charge: 33nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ10N80D1 nach Preis ab 0.92 EUR bis 1.83 EUR
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WMJ10N80D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 215W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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