WMJ12N120D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WMJ12N120D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 12A, Pulsed drain current: 48A, Power dissipation: 278W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 1.25Ω, Mounting: THT, Gate charge: 94nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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WMJ12N120D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |